Unlanded vias with a low dielectric constant material as an intraline dielectric

ABSTRACT

A method of fabricating an unlanded via over a polymer that is used as an intraline or intralayer dielectric is described. In one embodiment, the present invention creates an etch-stop layer for forming unlanded vias using three steps. A recess is created in an intraline dielectric, such as an organic polymer. An etch-stop layer is then deposited over the intraline dielectric. The etch-stop layer is then polished back before depositing a final insulating layer. The unlanded via is formed by etching through the final insulating layer. The intraline dielectric is protected by the etch-stop layer during the etch of the final insulating layer to form the unlanded via.

This is a division of application Ser. No. 08/829,054, filed Mar. 31, 1997, now U.S. Pat. No. 5,960,316 therein.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to semiconductor processing. More specifically, the present invention relates to a structure and method for forming an unlanded via.

2. Description of Related Art

During manufacturing of a semiconductor integrated circuit, electrically conductive materials patterned in electrical circuitry are layered over a base transistor structure that is disposed on a semiconductor substrate. The electrically conductive materials, such as copper, are in different and noncontiguous planes. Vias or pathways connect the various layers of electrically conductive materials. An insulator or a dielectric material is placed between the separate planes of conductive material around the vias and also within the trenches and the circuit pattern of a layer of conductive material. Vias are usually formed as landed vias, which rest entirely on a conductive layer, and not as unlanded vias, which rest partially on a conductive layer and partially on an insulator.

The demand for closer packing of devices means increased packing density of vias. Unlanded vias are preferable to landed vias in order to achieve a higher packing density. In addition, because better device performance can be achieved with lower capacitance between conductive lines within an insulating layer, the industry is moving toward using insulators with a lower dielectric constant (K), such as an organic polymer (K˜2.5) instead of silicon dioxide (K˜4.0). Thus, the next generation of chip sets requires unlanded vias and low dielectric constant materials as intraline dielectrics.

FIG. 1 is a cross-section illustrating an interconnect structure in which two landed vias 111 and 113 are formed according to a prior art method. Metal lines 100 with oxide caps 103 are patterned and formed. A polymer 105 is then deposited and filled around the metal lines 100. Polymer 105 is polished back using chemical-mechanical polish until a top surface of polymer 105 is flush with a top surface of oxide cap 103. A thin passivation layer 107 is then deposited. Next, an interlayer dielectric 109, such as silicon dioxide, is deposited. Standard lithography is used to form landed vias 111 and 113. Landed vias 111 and 113 are created by etching through interlayer dielectric 109, through passivation layer 107, and through oxide cap 103 until landed vias 111 and 113 contact metal lines 100.

The same process is then used to create unlanded vias 200 and 202 in FIG. 2. Unfortunately, the prior art method shown in FIG. 1 cannot be used to create unlanded vias 200 and 202. During the etch of unlanded vias 200 and 202, polymer 105 has been punched through, which leads to device reliability problems. In addition, unlanded vias 200 and 202 cannot be filled with a metal, such as tungsten, because tungsten cannot nucleate on a polymer 105. Thus, a void is created and device performance is degraded. Thus, the prior art method cannot be used to create unlanded vias 200 and 202 as shown in FIG. 2 in the presence of a polymer. Therefore, the prior art method fails to allow the fabrication of unlanded vias over a metal and a polymer that is used as an intraline dielectric.

SUMMARY

The present invention relates to a method for forming an interconnect structure. The method comprises the following steps. A conductive structure having an insulator cap is formed. A low dielectric constant material is formed over the conductive structure. The low dielectric constant material is planarized. The low dielectric constant material is then selectively removed to create a recess. A stop layer is formed over the recess of the low dielectric constant material and over the conductive structure. The stop layer is then planarized.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention is illustrated by way of example and not by limitation in the figures of the accompanying drawings in which like references indicate similar elements.

FIG. 1A illustrates a cross-sectional view of a prior art method for forming landed vias.

FIG. 2 is a cross-section illustrating why the prior art method cannot be used to form unlanded vias.

FIG. 3A illustrates the first step in one embodiment of the present invention.

FIG. 3B illustrates a cross-section of the step following FIG. 3A.

FIG. 3C illustrates a cross-section of the step following FIG. 3B.

FIG. 3D is a cross-section illustrating the next step after FIG. 3C.

FIG. 3E is a cross-section illustrating the formation of a recess in a low dielectric constant material, which follows after FIG. 3D.

FIG. 3F is a cross-section illustrating the step following FIG. 3E.

FIG. 3G illustrates a cross-section of the planarization of an etch-stop layer, which follows the step shown in FIG. 3F.

FIG. 3H illustrates a cross-section of the step following FIG. 3G.

FIG. 3I is a cross-section illustrating the formation of two unlanded vias, which follows the step shown in FIG. 3H.

FIG. 4A is a cross-sectional view of another embodiment of the present invention.

FIG. 4B illustrates a cross-section of the next step following FIG. 4A.

FIG. 4C is a cross-sectional view illustrating the final step of the embodiment shown in FIG. 4B.

DETAILED DESCRIPTION

A method of forming an interconnect structure comprising an unlanded via formed over a low dielectric constant material as an intralayer dielectric is described. In the following description, numerous specific details are given to provide a thorough understanding of the invention. But it will be apparent to one skilled in the art that the invention may be practiced without these specific details. Moreover, in some instances, well-known semiconductor equipment and processes have not been set forth in detail in order not to unnecessarily hide the present invention.

The present invention is a method of forming an interconnect structure with unlanded vias and low dielectric constant materials used as an intraline dielectric. In one embodiment, the present inventive method comprises the following steps. A conductive structure having an insulator cap is formed. A low dielectric constant material is then formed over the conductive structure. The low dielectric constant material, such as an organic polymer, is then planarized. The low dielectric constant material is selectively removed to create a recess or a step between the low dielectric constant material and the conductive structure. An etch-stop layer is formed over the recess of the low dielectric constant material and over the conductive structure. The etch-stop layer is then planarized. An insulator is then formed over the etch-stop layer and part of the insulator is then removed to form an unlanded via. The unlanded via contacts the conductive structure and the etch-stop layer.

In one embodiment, the step of planarizing the etch-stop layer includes polishing the etch-stop layer until a top surface of the etch-stop layer is substantially planar with the top surface of the insulator cap of the conductive structure. In this embodiment, the unlanded via also contacts the insulator cap because part of the insulator cap is etched so that the unlanded via contacts the conductive structure. But in another embodiment, the step of planarizing the etch-stop layer includes polishing the etch-stop layer until a top surface of the etch-stop layer is substantially planar with the top surface of the conductive structure, wherein the insulator cap is removed during this planarization step. Consequently, the unlanded via contacts the conductive structure after etching through only the insulator.

The present invention provides several advantages over the prior art. The present invention allows the formation of unlanded vias over a low dielectric constant material, such as an organic polymer, that is used as an intraline or intralayer dielectric. Because an etch-stop layer protects the polymer during the via etch, there is no “punching through” the polymer. Thus, the low dielectric constant material (e.g., a polymer) is not exposed during the filling of the unlanded via. Therefore, a metal, such as tungsten, can be used to form a tungsten plug in the unlanded via. The tungsten is able to nucleate because it is not exposed to the low dielectric constant material, which can be a polymer. Consequently, a void is not created and device performance is not degraded. Thus, the present invention allows greater packing density with the formation of unlanded vias and thus meets the industry demand for greater chip density.

FIGS. 3A-3I are a cross-sectional view illustrating one embodiment of the present inventive method. Referring to FIG. 3A, a first conductive layer 302 is formed over a substrate 300. The substrate 300 typically contains active and passive semiconductor devices, at and within the substrate 300. The substrate can also be one of the layers in a multi-level interconnect. A first insulator 304 is formed over first conductive layer 302. In one embodiment, it is preferable that first insulator 304 be as thin a layer as possible, but still be able to serve as a polishing stop layer. In one embodiment, first insulator 304 has a thickness in the range of about 100 Angstroms (Å) to about 500 Å. It is to be appreciated that the thickness of first insulator 304 depends on the type of dielectric used as first insulator 304 and on the subsequent polishing process. First conductive layer 302 can be formed during a metallization step using CVD (chemical vapor deposition) metallization, sputter deposition, a metal reflow process or any other applicable method. First conductive layer 302 comprises a material selected from the group consisting of aluminum, copper, tungsten, silver, gold and their respective alloys. It is to be appreciated that other conductive materials can also be used to form first conductive layer 302. In addition, it will be appreciated that the circuit design determines the thickness of the first conductive layer 302. First insulator 304 can be formed using standard chemical vapor deposition (CVD) methods or other applicable techniques. In one embodiment, first insulator 304 is an oxide and first conductive layer 302 is aluminum.

In FIG. 3B, conventional lithography techniques are used to pattern and form a conductive structure or line 303 having an insulator cap 305. Next, as shown in FIG. 3C, a low dielectric constant material 307 (e.g., a dielectric constant (K) of less than 4) is formed over the conductive structure or line 303 and insulator cap 305. In one embodiment, low dielectric constant material 307 is an organic polymer, such as PAE (polyarylether). If low dielectric constant material 307 is a polymer, such as but not limited to parylene, polynaphthalene, Teflon (polytetrafluorethylene), then it 307 is deposited using CVD techniques. On the other hand, a spin-on deposition is preferred if low dielectric constant material 307 is a polymer, such as but not limited to PAE, Flare™ (fluorinated poly(arylene ether)), polyimide and polyquinoline. Because dielectric films contribute to the capacitance of a interconnection system, the use of a lower dielectric constant material (e.g., PAE) improves interconnect performance in three areas: decreasing RC (resistance-capacitance) delay, decreasing cross-talk and decreasing power dissipation. Thus, device reliability increases.

In FIG. 3D, low dielectric constant material 307 is planarized until first insulator cap 305 is exposed. In one embodiment, low dielectric constant material 307 is planarized using chemical-mechanical polish techniques, which are well-known in the art. It is to be appreciated that other planarization techniques can also be used.

Referring to FIG. 3E, low dielectric constant material 307 is selectively removed to create a recess so that a top surface of low dielectric constant material 307 is below a top surface of conductive structure 303. In one embodiment, an oxygen plasma etch is used to etch low dielectric constant material 307 without etching first insulator cap 305. In another embodiment, a wet etch can be used to selectively etch low dielectric constant material 307 without etching first insulator cap 305. It will be appreciated that other methods can also be used to selectively remove low dielectric constant material 307. The depth of the recess created can vary depending on the thickness of the first insulator cap 305 and a subsequently formed stop layer 309 (shown in FIG. 3F). In one embodiment, the depth of the recess created by selective etch or removal of low dielectric constant material 307 can be in the range of about 50 Å to about 100 Å.

In FIG. 3F, a second insulator 309 is formed over low dielectric constant material 307 and conductive structure 303 and its first insulator cap 305. Second insulator 309 can be any dielectric that can serve as an etch-stop layer. In one embodiment, second insulator 309 is preferably silicon nitride. Referring to FIG. 3G, second insulator 309 is planarized. In one embodiment, conventional chemical-mechanical polish techniques are used to polish back second insulator 309. Second insulator 309 is planarized until a top surface of first insulator cap 305 is exposed. In one embodiment, second insulator 309 is planarized until a top surface of second insulator 309 is substantially planar with the top surface of first insulator cap 305.

In FIG. 3H, a third insulator or interlayer dielectric 311 is formed over the substrate shown in FIG. 3G. In one embodiment, third insulator 311 is preferably a material with a lower dielectric constant than the second insulator 309. Thus, in one embodiment, third insulator 311 is an oxide, such as silicon dioxide, and second insulator 309 is a nitride, such as silicon nitride.

Referring to FIG. 3I, two unlanded vias 313 and 315 are etched through third insulator 311. A portion of first insulator cap 305 and second insulator 309 are also etched during the formation of unlanded vias 313 and 315. In one embodiment, unlanded vias 313 and 315 can be filled with a metal, such as tungsten to form a tungsten plug that is electrically connected to conductive structure or line 303. Unlike the prior art, low dielectric constant material 307 is protected during the etch or formation of unlanded vias 313 and 315 and also during a metal fill of unlanded vias 313 and 315. It is to be appreciated that other conductive materials, such as copper, can also be used to fill unlanded vias 313 and 315. It is also to be appreciated that the higher the selectivity between third insulator 311 and second insulator 309, then the thinner second insulator 309 layer can be. It will also be apparent that the thickness of second insulator 309 that serves as an etch-stop layer is determined in part by the recess created in FIG. 3E during the selective removal of low dielectric constant material 307. Thus, the thickness of second insulator 309 is affected by a number of factors.

A cross-sectional view illustrating another embodiment of the present invention is shown in FIGS. 4A-4C. Referring to FIG. 4A, the steps prior to the structure shown in FIG. 4A are the same as the steps illustrated in FIGS. 3A-3F. FIG. 4A differs from FIG. 3G in the amount of second insulator 309 that is planarized. In FIG. 4A, second insulator 309 is planarized until a top surface of conductive structure or line 303 is exposed. Thus, during the planarization of second insulator 309, first insulator cap 305 is removed. In one embodiment, a top surface of second insulator 309 is substantially planar with the top surface of conductive structure 303. Second insulator 309 can serve as an etch-stop layer during the etch to create the unlanded via.

In FIG. 4B, a third insulator 400 can be formed over second insulator 309 and conductive line 303. Third insulator 400 preferably has a lower dielectric constant than second insulator 309. In one embodiment, third insulator 400 is an oxide, such as silicon dioxide, and second insulator 309 is a nitride, such as silicon nitride. In FIG. 4C, two unlanded vias 402 and 404 are etched through third insulator 400. Unlanded vias 402 and 404 contact conductive structure 303 and second insulator 309. Second insulator 309 serves as an etch-stop layer during the etch of unlanded vias 402 and 404 through third insulator 400. Moreover, second insulator 309 also serves to protect low dielectric constant material 307 during the etch of unlanded vias 402 and 404. In addition, unlanded vias 402 and 404 can be filled with a metal, such as tungsten, to create a tungsten plug without creating a void since the tungsten is not exposed to the low dielectric constant material 307.

In the above description, numerous specific details are given to be illustrative and not limiting of the present invention. It will be evident to one skilled in the art that the invention may be practiced without these specific details. Moreover, in some instances, well-known semiconductor equipment and processes have not been set forth in detail in order to not unnecessarily obscure the present invention. Thus, the method of the present invention is defined by the appended claims. 

What is claimed is:
 1. An integrated circuit structure, comprising: a substrate; a conductive structure disposed on said substrate; a first insulator disposed on said conductive structure; a low dielectric constant material disposed adjacent to a lower portion of said conductive structure and on said substrate; a second insulator disposed on said low dielectric constant material, said second insulator being adjacent to said first insulator and an upper portion of said conductive structure; a third insulator disposed on said first insulator and said second insulator, said third insulator having a lower dielectric constant than said second insulator; and a conductive plug having a flat lower surface, said flat lower surface disposed on said conductive structure and said second insulator and adjacent to said first insulator and said second insulator.
 2. The integrated circuit structure of claim 1, wherein said low dielectric constant material comprises a polymer.
 3. The integrated circuit structure of claim 1, wherein said first insulator comprises a polishing stop layer.
 4. The integrated circuit structure of claim 1, wherein said second insulator comprises a nitride and said third insulator comprises an oxide.
 5. The integrated circuit structure of claim 1, wherein said second insulator comprises an etch-stop layer.
 6. An integrated circuit structure, comprising: a substrate; a conductive structure disposed on said substrate; a low dielectric constant material disposed adjacent to a lower portion of said conductive structure and on said substrate; a first insulator disposed on said low dielectric constant material, said first insulator being adjacent to an upper portion of said conductive structure; a second insulator disposed on said conductive structure and said first insulator, said second insulator having a lower dielectric constant than said first insulator; and a conductive plug disposed on said conductive structure and said first insulator and adjacent to said second insulator.
 7. The integrated circuit structure of claim 6, wherein said low dielectric constant material comprises a polymer.
 8. The integrated circuit structure of claim 6, wherein said first insulator is thinner than and has a different dielectric constant than said second insulator.
 9. The integrated circuit structure of claim 6, wherein said first insulator comprises a nitride and said second insulator comprises an oxide. 